4v drive nch + pch mosfet SH8M11 ? structure ? dimensions (unit : mm) silicon n-channel mosfet/ silicon p-channel mosfet ? features 1) low on-resistance. 2) high power package(sop8). 3) low voltage drive(4v drive). ? application switching ? packaging specifications ? inner circui t package taping code tb basic ordering unit (pieces) 2500 SH8M11 ? ? absolute maximum ratings (ta = 25 ? c) tr1 : n-ch tr2 : p-ch drain-source voltage v dss 30 ? 30 v gate-source voltage v gss ? 20 ? 20 v continuous i d ? 3.5 ? 3.5 a pulsed i dp ? 14 ? 12 a continuous i s 1.6 ? 1.6 a pulsed i sp 14 ? 12 a w / total w / element channel temperature tch ? c range of storage temperature tstg ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. type source current (body diode) drain current parameter power dissipation p d symbol 2.0 ? 55 to +150 unit limits 1.4 150 *1 *2 *1 sop8 (1) (8) (5) (4) (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain ?1 esd protection diode ?2 body diode ?2 ?1 ?2 ?1 (8) (7) (1) (2) (6) (5) (3) (4) 1/10 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. free datasheet http:///
SH8M11 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs =20v, v ds =0v drain-source breakdown voltage v (br)dss 30 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =30v, v gs =0v gate threshold voltage v gs (th) 1.0 - 2.5 v v ds =10v, i d =1ma -7098 i d =3.5a, v gs =10v - 90 126 i d =3.5a, v gs =4.5v 100 140 i d =3.5a, v gs =4v forward transfer admittance l y fs l 1.5 - - s v ds =10v, i d =3.5a input capacitance c iss - 85 - pf v ds =10v output capacitance c oss - 40 - pf v gs =0v reverse transfer capacitance c rss - 20 - pf f=1mhz turn-on delay time t d(on) -4-nsi d =1.7a, v dd 15v rise time t r -8-nsv gs =10v turn-off delay time t d(off) - 18 - ns r l =8.8 ? fall time t f -3-nsr g =10 ? total gate charge q g - 1.9 - nc i d =3.5a, v dd 15v gate-source charge q gs - 0.8 - nc v gs =5v gate-drain charge q gd - 0.4 - nc *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =3.5a, v gs =0v *pulsed parameter conditions conditions parameter static drain-source on-state resistance r ds (on) m ? * * * * * * * * * * 2/10 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8M11 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss ? 30 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss - ? 1 ? av ds = ? 30v, v gs =0v gate threshold voltage v gs (th) ? 1.0 - ? 2.5 v v ds = ? 10v, i d = ? 1ma -7098 i d = ? 3.5a, v gs = ? 10v - 100 140 i d = ? 1.7a, v gs = ? 4.5v - 110 155 i d = ? 1.7a, v gs = ? 4.0v forward transfer admittance l y fs l 2.5 - - s v ds = ? 10v, i d = ? 3.5a input capacitance c iss - 410 - pf v ds = ? 10v output capacitance c oss - 55 - pf v gs =0v reverse transfer capacitance c rss - 55 - pf f=1mhz turn-on delay time t d(on) -9-nsi d = ? 1.7a, v dd ? 15v rise time t r - 18 - ns v gs = ? 10v turn-off delay time t d(off) - 35 - ns r l =8.8 ? fall time t f - 12 - ns r g =10 ? total gate charge q g - 4.2 - nc i d = ? 3.5a, v dd ? 15v gate-source charge q gs - 1.7 - nc v gs = ? 5v gate-drain charge q gd - 1.1 - nc *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 3.5a, v gs =0v *pulsed parameter conditions conditions m ? static drain-source on-state resistance r ds (on) parameter * * * * * * * * * * * * * * * * * 3/10 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8M11 ? electrical characteristic curves (ta=25 ? c) tr.1(nch) 0 0.5 1 1.5 2 2.5 3 3.5 0 0.2 0.4 0.6 0.8 1 v gs = 2.5 v v gs = 10 v v gs = 4.5 v v gs = 4.0 v v gs = 2.8 v ta= 25 c pulsed fig. 1 typical output characteristics( ) drain current : i d [a] drain - source voltage : v ds [v] 0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 6 8 10 v gs = 10 v v gs = 4.5 v v gs = 4.0 v v gs = 2.5 v v gs = 2.8 v ta= 25 c pulsed fig. 2 typical output characteristics( ) drain - source voltage : v ds [v] drain current : i d [a] 0.001 0.01 0.1 1 10 0 1 2 3 v ds = 10 v pulsed ta= 125 c ta= 75 c ta= 25 c ta= - 25 c fig. 3 typical transfer characteristics drain current : i d [a] gate - source voltage : v gs [v] 10 100 1000 0.1 1 10 v gs = 4.0 v v gs = 4.5 v v gs = 10 v . ta= 25 c pulsed fig. 4 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 10 100 1000 0.1 1 10 v gs = 10 v pulsed ta= 125 c ta= 75 c ta= 25 c ta= - 25 c fig. 5 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 10 100 1000 0.1 1 10 v gs = 4.5 v pulsed ta= 125 c ta= 75 c ta= 25 c ta= - 25 c fig. 6 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 4/10 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8M11 10 100 1000 0.1 1 10 v gs = 4.0 v pulsed ta= 125 c ta= 75 c ta= 25 c ta= - 25 c fig. 7 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds (on)[m ? ] 0.1 1 10 0.01 0.1 1 10 v ds = 10 v pulsed ta= 125 c ta= 75 c ta= 25 c ta= - 25 c fig. 8 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain - current : i d [a] 0.01 0.1 1 10 0 0.5 1 1.5 v gs = 0 v pulsed ta= 125 c ta= 75 c ta= 25 c ta= - 25 c fig. 9 reverse drain current vs. sourse - drain voltage source current : is [a] source - drain voltage : v sd [v] 0 50 100 150 200 0 2 4 6 8 10 i d = 3.5 a i d = 1.75 a ta= 25 c pulsed fig. 10 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds (on)[m ? ] gate - source voltage : v gs [v] 1 10 100 1000 0.01 0.1 1 10 t f t d(on) t d(off) ta= 25 c v dd = 15 v v gs = 10 v r g = 10 pulsed t r fig. 11 switching characteristics switching time : t [ns] drain - current : i d [a] 0 2 4 6 8 10 0 1 2 3 4 5 ta= 25 c v dd = 15 v i d = 3.5 a pulsed fig. 12 dynamic input characteristics gate - source voltage : v gs [v] total gate charge : qg [nc] 5/10 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8M11 1 10 100 1000 0.01 0.1 1 10 100 c iss c rss ta= 25 c f= 1 mhz v gs = 0 v c oss fig. 13 typical capacitance vs. drain - source voltage drain - source voltage : v ds [v] capacitance : c [pf] 0.01 0.1 1 10 100 0.1 1 10 100 p w = 10 ms ta = 25 c single pulse : 1 unit mounted on ceramic board dc operation operation in this area is limited by r ds(on) (v gs = 10 v) p w = 100 us p w = 1 ms fig. 14 maximum safe operating aera drain - source voltage : v ds [v] drain current : i d (a) 0.001 0.01 0.1 1 10 0.0001 0.01 1 100 ta = 25 c single pulse : 1 unit rth(ch - a)(t) = r(t) rth(ch - a) rth(ch - a) = 89.3 c /w fig. 15 normalized transient thermal resistance vs. pulse width pulse width : pw(s) normarized transient thermal resistance : r (t) 6/10 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8M11 tr.2(pch) 0 1 2 3 0 0.2 0.4 0.6 0.8 1 v gs = - 2.5v v gs = - 10v v gs = - 4.5v v gs = - 4.0v v gs = - 2.8v v gs = - 3.0v ta=25 c pulsed fig.1 typical output characteristics( ) drain current : - i d [a] drain - source voltage : - v ds [v] 0 1 2 3 0 2 4 6 8 10 v gs = - 2.5v v gs = - 3.0v v gs = - 2.8v v gs = - 10v v gs = - 4.5v v gs = - 4.0v ta=25 c pulsed fig.2 typical output characteristics( ) drain - source voltage : - v ds [v] drain current : - i d [a] 0.001 0.01 0.1 1 10 0 1 2 3 v ds = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.3 typical transfer characteristics drain current : - i d [a] gate - source voltage : - v gs [v] 10 100 1000 0.1 1 10 v gs = - 4.0v v gs = - 4.5v v gs = - 10v ta=25 c pulsed fig.4 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 10 100 1000 0.1 1 10 v gs = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.5 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 10 100 1000 0.1 1 10 v gs = - 4.5v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.6 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 7/10 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8M11 10 100 1000 0.1 1 10 v gs = - 4.0v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.7 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 0.1 1 10 100 0.01 0.1 1 10 100 v ds = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.8 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain - current : - i d [a] 0.01 0.1 1 10 0 0.5 1 1.5 v gs =0v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.9 reverse drain current vs. sourse - drain voltage source current : - i s [a] source - drain voltage : - v sd [v] 0 50 100 150 200 250 0 5 10 15 i d = - 1.7a i d = - 3.5a ta=25 c pulsed fig.10 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds ( on )[m ? ] gate - source voltage : - v gs [v] 1 10 100 1000 0.01 0.1 1 10 t f t d(on) t d(off) t a =25 c v dd = - 15v v gs = - 10v r g =10 pulsed t r fig.11 switching characteristics switching time : t [ns] drain - current : - i d [a] 0 2 4 6 8 10 0 2 4 6 8 10 t a =25 c v dd = - 15v i d = - 3.5a r g =10 pulsed fig.12 dynamic input characteristics gate - source voltage : - v gs [v] total gate charge : qg [nc] 8/10 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
SH8M11 0.01 0.1 1 10 100 0.1 1 10 100 p w = 10ms t a = 25 c single pulse : 1unit mounted on a ceramic board dc operation operation in this area is limited by r ds(on) (v gs = - 10v) p w =100us p w =1ms fig.14 maximum safe operating aera drain - source voltage : - v ds [v] drain current : - i d (a) 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 t a = 25 c single pulse : 1unit rth(ch - a)(t) = r(t) rth(ch - a) rth(ch - a) = 82.3 c /w SH8M11 ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. v gs r g v d s d.u.t. i d r l v dd 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform v gs r g v ds d.u.t. i d r l v dd 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.3-1 switching time measurement circuit fig.3-2 switching waveforms fig.4-1 gate charge measurement circuit fig.4-2 gate charge waveform 10/10 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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